Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films-Reference-Cited by-同舟云学术

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Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films

Published:1985-01-20 Issue:Part 1, No. 1 Volume:24 Page:62-67
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yokota Katsuhiro,Tamura Susumu,Ishihara Shinji,Kimura Itsuro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Maskless Patterning of Gallium-Irradiated Superconducting Silicon Using Focused Ion Beam;ACS Applied Electronic Materials;2020-02-07

2. High-fluence Ga-implanted silicon—The effect of annealing and cover layers;Journal of Applied Physics;2014-07-14

3. Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors;Acta Physica Polonica A;2013-05

4. Superconducting Ga-overdoped Ge layers capped with SiO2: Structural and transport investigations;Physical Review B;2012-04-27

5. Superconducting films fabricated by high-fluence Ga implantation in Si;Physical Review B;2011-06-03

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