Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors-Reference-Cited by-同舟云学术

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Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors

Published:2013-05 Issue:5 Volume:123 Page:916-919
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Fiedler J.¹²,Heera V.¹,Voelskow M.¹,Mücklich A.¹,Reuther H.¹,Skorupa W.¹,Gobsch G.²,Helm M.¹

Affiliation:

1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany

2. Experimental Physics, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau, Germany

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulsed Laser Annealed Ga Hyperdoped Poly‐Si / SiO _x Passivating Contacts for High‐Efficiency Monocrystalline Si Solar Cells;ENERGY & ENVIRONMENTAL MATERIALS;2023-01-09

2. Superconducting Gallium Implanted Germanium;Subsecond Annealing of Advanced Materials;2014

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