Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs-Reference-Cited by-同舟云学术

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Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs

Published:1981-06 Issue:6 Volume:20 Page:L429-L432
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Watanabe Miyoko Oku,Tanaka Atsushi,Nakanisi Takatosi,Zohta Yasuhito

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A model for arsenic anti-site incorporation in GaAs grown by hydride vapor phase epitaxy;Journal of Applied Physics;2014-12-28

2. Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix;Materials Science in Semiconductor Processing;2014-09

3. Defect Levels in n-Type Gallium Arsenide and Gallium Aluminum Arsenide Layers;physica status solidi (a);2001-02

4. Distribution of below-gap states in undoped GaAs/AlGaAs quantum wells revealed by two-wavelength excited photoluminescence;Journal of Luminescence;1998-07

5. Characterization of deep‐level defects in GaAs irradiated by 1 MeV electrons;Journal of Applied Physics;1993-01-15

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