Characterization of deep‐level defects in GaAs irradiated by 1 MeV electrons
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353375
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1. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
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