Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors-Reference-Cited by-同舟云学术

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Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors

Published:2002-02-28 Issue:Part 1, No. 2B Volume:41 Page:1094-1098
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Endoh Akira,Yamashita Yoshimi,Shinohara Keisuke,Higashiwaki Masataka,Hikosaka Kohki,Mimura Takashi,Hiyamizu Satoshi,Matsui Toshiaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=2S/a=1094/pdf

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D nanofabrication using controlled-acceleration-voltage electron beam lithography with nanoimprinting technology;Advanced Optical Technologies;2019-05-30

2. InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review;AEU - International Journal of Electronics and Communications;2018-09

3. Monte Carlo simulation of InAs HEMTs considering strain and quantum confinement effects;Journal of Physics: Conference Series;2013-08-12

4. Terahertz GaAs Schottky diode mixer and multiplier MIC's based on e-beam technology;2013 International Conference on Indium Phosphide and Related Materials (IPRM);2013-05

5. DC and RF characteristics of In 0.52 Al 0.48 As/In 0.7 Ga 0.3 As HEMTs at 300 and 16 K;Electronics Letters;2013-01

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