DC and RF characteristics of In 0.52 Al 0.48 As/In 0.7 Ga 0.3 As HEMTs at 300 and 16 K-Reference-Cited by-同舟云学术

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DC and RF characteristics of In 0.52 Al 0.48 As/In 0.7 Ga 0.3 As HEMTs at 300 and 16 K

Published:2013-01 Issue:3 Volume:49 Page:217-219
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Endoh A.¹,Watanabe I.¹,Mimura T.¹,Matsui T.¹

Affiliation:

1. National Institute of Information and Communications Technology4‐2‐1 Nukui‐kitamachiKoganeiTokyo184‐8795Japan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2012.4180

Reference6 articles.

1. Velocity enhancement in cryogenically cooled InP‐based HEMTs on (411)A‐oriented substrates;Watanabe I.;IEEE Trans. Electron Devices,2006

2. Novel high‐yield trilayer resist process for 0.1 µm T‐gate fabrication;Wakita A.S.;J. Vac. Sci. Technol. B,1995

3. Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment

4. Fabrication technology and device performance of sub‐50‐nm‐gate InP‐based high electron mobility transistors;Endoh A.;Jpn. J. Appl. Phys.,2002

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale dual-gate InAlAs/InGaAs HEMT with improved characteristics;International Journal of Electronics Letters;2019-03-04

2. Design and Simulation of AlGaAs/InGaAs/GaAs Based Pseudomorphic HEMT Using SILVACO ATLASTM;2018 2nd International Conference on Data Science and Business Analytics (ICDSBA);2018-09

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