Influences of Point and Extended Defects on As Diffusion in Si-Reference-Cited by-同舟云学术

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Influences of Point and Extended Defects on As Diffusion in Si

Published:2002-01-15 Issue:Part 1, No. 1 Volume:41 Page:227-231
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Ryangsu,Hirose Tetsuya,Shano Toshihumi,Tsuji Hiroshi,Taniguchi Kenji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=1R/a=227/pdf

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers;Journal of Applied Physics;2015-09-21

2. Effects of switching from 〈110〉 to 〈100〉 channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors;Solid-State Electronics;2010-04

3. Front-end process modeling in silicon;The European Physical Journal B;2009-11-07

4. First-principles studies of small arsenic interstitial complexes in crystalline silicon;Physical Review B;2009-02-02

5. Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon;Journal of Applied Physics;2008-11-15

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