Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon-Reference-Cited by-同舟云学术

Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon

Published:2008-11-15 Issue:10 Volume:104 Page:103716
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Giubertoni Damiano,Pepponi Giancarlo,Gennaro Salvatore,Bersani Massimo,Sahiner Mehmet Alper,Kelty Stephen P.,Doherty Roisin,Foad Majeed A.,Kah Max,Kirkby Karen J.,Woicik Joseph C.,Pianetta Piero

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3026706

Reference48 articles.

1. Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals

2. Arsenic Clustering in Silicon

3. Solid solubility of As in Si as determined by ion implantation and cw laser annealing

4. Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon

5. The solid solubility and thermal behavior of metastable concentrations of As in Si

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