Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates-Reference-Cited by-同舟云学术

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Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

Published:2002-04-30 Issue:Part 1, No. 4B Volume:41 Page:2484-2488
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kudo Hiromitsu,Murakami Kenji,Zheng Ruisheng,Yamada Yoichi,Taguchi Tsunemasa,Tadatomo Kazuyuki,Okagawa Hiroaki,Ohuchi Youichiro,Tsunekawa Takashi,Imada Yoshiyuki,Kato Munehiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=4S/a=2484/pdf

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light Extraction of High-Efficient Light-Emitting Diodes;Topics in Applied Physics;2017

2. Growth of GaN films on circle array patterned Si (111) substrates;Journal of Crystal Growth;2014-09

3. Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate;Thin Solid Films;2013-11

4. Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2013-08-01

5. Light Extraction Efficiency Part B. Light Extraction of High Efficient LEDs;Topics in Applied Physics;2013

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