Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate-Reference-Cited by-同舟云学术

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Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate

Published:2002-07-15 Issue:Part 2, No. 7B Volume:41 Page:L846-L848
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tanaka Shigeyasu,Honda Yoshio,Kameshiro Norifumi,Iwasaki Ryuta,Sawaki Nobuhiko,Tanji Takayoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=7B/a=L846/pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography;physica status solidi (b);2024-06-21

2. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials;Progress in Crystal Growth and Characterization of Materials;2016-06

3. MOCVD of Nitrides;Handbook of Crystal Growth;2015

4. Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate;CrystEngComm;2012

5. Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates;Journal of the Korean Physical Society;2009-06-15

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