Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate-Reference-Cited by-同舟云学术

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Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate

Published:2012 Issue:13 Volume:14 Page:4486
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lee Ling,Chien Kun-Feng,Chou Wu-Ching,Ko Chih-Hsin,Wu Cheng-Hsien,Lin You-Ru,Wan Cheng-Tien,Wann Clement H.,Hsu Chao-Wei,Chen Yung-Feng,Su Yan-Kuin

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2012/CE/C2CE25335F

Reference17 articles.

1. Progress in the growth of nonpolar gallium nitride

2. Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

3. Line defects of M-plane GaN grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy

4. A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy

5. Role of the buffer layer thickness on the formation of basal plane stacking faults in a-plane GaN epitaxy on r-sapphire

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD;Semiconductor Science and Technology;2023-02-06

2. Monolithic semi-polar ( 1 1 ¯ 01 ) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*;Chinese Physics B;2019-08-01

3. Semipolar ( $$ 1\bar{1}01 $$ 1 1 ¯ 01 ) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate;Journal of Materials Science;2019-02-25

4. Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates;Gallium Nitride Materials and Devices XIII;2018-02-23

5. Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films;CrystEngComm;2018

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