Line defects of M-plane GaN grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Line defects of M-plane GaN grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy

Published:2008-05-19 Issue:20 Volume:92 Page:202106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lo Ikai,Hsieh Chia-Ho,Chen Yen-Liang,Pang Wen-Yuan,Hsu Yu-Chi,Chiang Jih-Chen,Chou Ming-Chi,Tsai Jenn-Kai,Schaadt D. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2924288

Reference29 articles.

1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

2. Polarization-sensitive ultraviolet photodetectors based on M-plane GaN grown on LiAlO2 substrates

3. Gate-controlled spin splitting in GaN∕AlN quantum wells

4. Anomalousk-dependent spin splitting in wurtziteAlxGa1−xN∕GaNheterostructures

5. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and electronic properties of a-edge dislocations along ⟨1-100⟩ in GaN;Journal of Applied Physics;2018-06-28

2. GaN and InN Hexagonal Microdisks;Epitaxy;2018-03-07

3. Growth and Characteristics of High-quality InN by Plasma- Assisted Molecular Beam Epitaxy;Modern Technologies for Creating the Thin-film Systems and Coatings;2017-03-08

4. Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates;Scanning;2017

5. Characterization of M -plane GaN thin films grown on misoriented γ-LiAlO 2 (100) substrates;Journal of Crystal Growth;2016-09

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