Structural and electronic properties of a-edge dislocations along ⟨1-100⟩ in GaN-Reference-Cited by-同舟云学术

Structural and electronic properties of a-edge dislocations along ⟨1-100⟩ in GaN

Published:2018-06-28 Issue:24 Volume:123 Page:244301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Giaremis S.¹^ORCID,Komninou Ph.¹,Belabbas I.²^ORCID,Chen J.³,Kioseoglou J.¹^ORCID

Affiliation:

1. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece

2. Groupe de Cristallographie et de Simulation des Matériaux, Laboratoire de Physico-Chimie des Matériaux et Catalyse, Faculté des Sciences Exactes, Université de Bejaia, Bejaia 06000, Algeria

3. CIMAP-Alençon, UMR6252 CNRS-CEA-ENSICAEN, Université de Caen Basse-Normandie, 14032 Caen Cedex, France

Funder

European Regional Development Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5034198

Reference82 articles.

1. The Blue Laser Diode. The Complete Story

2. Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K

3. Gallium-nitride-based materials for blue to ultraviolet optoelectronics devices

4. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

5. Strain-induced polarization in wurtzite III-nitride semipolar layers

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