Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates-Reference-Cited by-同舟云学术

Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

Published:2010-12-24 Issue:1 Volume:4 Page:012105
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Chiu Ching-Hsueh,Lin Da-Wei,Lin Chien-Chung,Li Zhen-Yu,Chang Wei-Ting,Hsu Hung-Wen,Kuo Hao-Chung,Lu Tien-Chang,Wang Shing-Chung,Liao Wei-Tsai,Tanikawa Tomoyuki,Honda Yoshio,Yamaguchi Masahito,Sawaki Nobuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=1/a=012105/pdf

Reference11 articles.

1. High-luminance LEDs replace incandescent lamps in new applications

2. Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate

3. High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates

4. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

5. Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

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5. Semi‐Polar InGaN‐Based Green Light‐Emitting Diodes Grown on Silicon;physica status solidi (a);2019-11-11