Device Physics of Ferroelectric Thin-Film Memories-Reference-Cited by-同舟云学术

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Device Physics of Ferroelectric Thin-Film Memories

Published:1999-04-30 Issue:Part 1, No. 4B Volume:38 Page:2272-2274
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Scott J. F.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 137 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Electrical property modulation of Au/Ba0.6Sr0.4TiO3/La0.7Sr0.3MnO3 structure by continuous composition spread Mn doping;Ceramics International;2022-04

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