Nonvolatile Electrical Valley Manipulation in WS<sub>2</sub> by Ferroelectric Gating-Reference-Cited by-同舟云学术

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Nonvolatile Electrical Valley Manipulation in WS₂ by Ferroelectric Gating

Published:2022-11-22 Issue:12 Volume:16 Page:20598-20606
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Li Xu¹^ORCID,Yang Chengbiao¹,Xia Yuanzheng¹,Zeng Xinlong¹,Shen Peng¹,Li Linglong²,Xu Feiya¹,Cai Duanjun¹^ORCID,Wu Yaping¹^ORCID,Wu Zhiming¹^ORCID,Li Shuping¹,Kang Junyong¹

Affiliation:

1. Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Jiujiang Research Institute, Xiamen University, Xiamen361005, P.R. China

2. School of Physics, Southeast University, Nanjing211189, P.R. China

Funder

Ministry of Science and Technology of the People's Republic of China

Central University Basic Research Fund of China

National Natural Science Foundation of China

Natural Science Foundation of Jiangxi Province

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c07469

Reference53 articles.

1. Polarized light boosts valleytronics

2. Valley filter and valley valve in graphene

3. Room-temperature valleytronic transistor

4. Valley Susceptibility of an Interacting Two-Dimensional Electron System

5. Valley Splitting of AlAs Two-Dimensional Electrons in a Perpendicular Magnetic Field

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1. External field regulation strategies for exciton dynamics in 2D TMDs;Optical Materials Express;2023-03-17

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