Electrical Properties of Multiple High-Dose Si Implantation in p-GaN-Reference-Cited by-同舟云学术

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Electrical Properties of Multiple High-Dose Si Implantation in p-GaN

Published:1999-07-15 Issue:Part 2, No. 7B Volume:38 Page:L802-L804
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lai Wei-Chih,Yokoyama Mesio,Tsai Chiung-Chi,Chang Chen-Shiung,Guo Jan-Dar,Tsang Jian-Shihn,Chan Shih-Hsiung,Chang Chun-Yen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical activation characteristics of silicon-implanted GaN;Journal of Applied Physics;2005-04-15

2. GaN p–n junction diode formed by Si ion implantation into p-GaN;Solid-State Electronics;2002-12

3. n+-GaN formed by Si implantation intop-GaN;Journal of Applied Physics;2002-02-15

4. Low-Resistance Ohmic Contacts to AlGaN/GaN Heterostructure Using Si/Ti/Al/Cu/Au Multilayer Metal Scheme;Japanese Journal of Applied Physics;2000-07-15

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