GaN p–n junction diode formed by Si ion implantation into p-GaN-Reference-Cited by-同舟云学术

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GaN p–n junction diode formed by Si ion implantation into p-GaN

Published:2002-12 Issue:12 Volume:46 Page:2179-2183
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee M.L,Sheu J.K,Yeh L.S,Tsai M.S,Kao C.J,Tun C.J,Chang S.J,Chi G.C

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Photoluminescence of ion‐implanted GaN

2. Properties of Group III Nitrides;Edgar,1994

3. Ion implantation doping and isolation of GaN

4. Electrical and structural analysis of high-dose Si implantation in GaN

5. Damage to epitaxial GaN layers by silicon implantation

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3. Electrical and structural characteristics of tin-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering;Materials Science in Semiconductor Processing;2017-03

4. Temperature dependence of electrical characteristics of n-In Ga1−N/p-Si hetero-junctions made totally by RF magnetron sputtering;Thin Solid Films;2015-08

5. Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20V;Materials Science in Semiconductor Processing;2015-04

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