MOCVD Growth of ZnSxSe1-xEpitaxial Layers Lattice-Matched to GaP Substrates-Reference-Cited by-同舟云学术

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MOCVD Growth of ZnSxSe1-xEpitaxial Layers Lattice-Matched to GaP Substrates

Published:1989-02-20 Issue:Part 2, No. 2 Volume:28 Page:L275-L277
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mitsuishi Iwao,Mitsuhashi Hiroshi,Kukimoto Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and characterization of ZnS x Se 1-x films using Brush plating technique;Materials Today: Proceedings;2017

2. Optical and structural properties of ZnSxSe1−xthin films deposited by thermal evaporation;The European Physical Journal Applied Physics;2009-07-04

3. Optimization of Pretreatment of GaP Substrates for Molecular Beam Epitaxy of ZnS-Based Materials;physica status solidi (b);2002-01

4. Growth of ZnSxSe1−x layers on Si substrates by atomic layer epitaxy;Materials Chemistry and Physics;1999-02

5. ALE growth of ZnS1−xSex thin films by substituting surface sulfur with elemental selenium;Applied Surface Science;1997-03

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