Optimization of Pretreatment of GaP Substrates for Molecular Beam Epitaxy of ZnS-Based Materials
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Band Offsets in CdZnS/ZnS Strained-Layer Quantum Well and Its Application to UV Laser Diode
2. Ultraviolet stimulated emission and optical gain spectra in CdxZn1−xS‐ZnS strained‐layer superlattices
3. High temperature growth of ZnS and ZnMgS by molecular beam epitaxy under high sulfur beam pressure
4. Photoluminescence study of ZnS/ZnMgS single quantum wells
5. Molecular beam epitaxy and optical properties of ZnCdS/ZnMgS quantum wells on GaP
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1. Characterization of ZnS films on different substrates by pulsed laser deposition;Japanese Journal of Applied Physics;2023-11-01
2. Molecular Beam Epitaxy and p-type Doping of ZnMgSTe Quaternary Alloys;Journal of Electronic Materials;2018-03-29
3. Deoxidation of (001) III–V semiconductors in metal-organic vapour phase epitaxy;Journal of Applied Physics;2016-08-28
4. ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers;physica status solidi (b);2016-02-03
5. Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes;physica status solidi (c);2014-04-07
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