Growth of ZnSxSe1−x layers on Si substrates by atomic layer epitaxy
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference23 articles.
1. MBE growth of high quality lattice-matched ZnSxSe1-x on GaAs substrates
2. Effect of MOVPE growth parameters on the photoluminescence linewidth of ZnSxSe1−x (0⩽x⩽1) epilayers on GaAs
3. Epitaxial growth of ZnSe on (100) GaAs by open-tube transport of elemental vapours in H2 flows
4. Growth and characterization of heteroepitaxial zinc selenide
5. Piezo- and photomodulated reflectivity spectra of ZnSe/GaAs and CdTe/InSb epilayers
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