Near-Room-Temperature Selective Oxidation on GaAs Using Photoresist as a Mask
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characteristics of InGaP∕InGaAs MOS-PHEMT with Liquid Phase–Oxidized GaAs Gate Dielectric;Journal of The Electrochemical Society;2011
2. Selective Liquid Phase Oxidation of AlGaAs and Application to AlGaAs∕InGaAs Pseudomorphic High Electron Mobility Transistor;Journal of The Electrochemical Society;2009
3. Selective Liquid-Phase Oxidation of InGaAs and Application to Metal-Oxide-Semiconductor InAlAs∕InGaAs Metamorphic HEMT Without Gate Recess;Journal of The Electrochemical Society;2008
4. Near-Room-Temperature Selective Oxidation on InAlAs and Application to In[sub 0.52]Al[sub 0.48]As∕In[sub 0.53]Ga[sub 0.47]As Metamorphic HEMTs;Journal of The Electrochemical Society;2007
5. InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric;IEEE Electron Device Letters;2005-12
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