InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric-Reference-Cited by-同舟云学术

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InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

Published:2005-12 Issue:12 Volume:26 Page:864-866
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kuan-Wei Lee ,Po-Wen Sze ,Yu-Ju Lin ,Nan-Ying Yang ,Mau-Phon Houng ,Yeong-Her Wang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/32998/01546135.pdf?arnumber=1546135

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5. High-performance GaAs-based metal–oxide–semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition;Applied Physics Express;2014-09-11

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