Characteristics of InGaP∕InGaAs MOS-PHEMT with Liquid Phase–Oxidized GaAs Gate Dielectric-Reference-Cited by-同舟云学术

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Characteristics of InGaP∕InGaAs MOS-PHEMT with Liquid Phase–Oxidized GaAs Gate Dielectric

Published:2011 Issue:12 Volume:158 Page:H1225
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lin Hsien-Cheng,Wu Cheng-Chieh,Lee Fang-Ming,Lee Kuan-Wei,Adriyanto Feri,Wang Yeong-Her

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Model for the temperature dependence of the threshold voltage of modulation-doped field-effect transistors

2. Two-dimensional electron gas at a semiconductor-semiconductor interface

3. Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K

4. High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs

5. Near-Room-Temperature Selective Oxidation on GaAs Using Photoresist as a Mask

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