Epitaxial Growth of Ti1- xAl xN Buffer Layer for a Ferroelectric (Ba, Sr)TiO3 Capacitor on Si Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Influence of the Addition of a Third Element on the Structure and Mechanical Properties of Transition-Metal-Based Nanostructured Hard Films: Part I—Nitrides;Nanostructured Coatings;2006
2. Formation and oxidation properties of (Ti1−xAlx)N thin films prepared by dc reactive sputtering;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05
3. Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO3 Thin Films;IEEJ Transactions on Sensors and Micromachines;2002
4. Preparation of heteroepitaxial Pb(Mg1/3Nb2/3)O3 (PMN) thin film by pulsed laser deposition on Si(001) substrate using La0.5Sr0.5CoO3 (LSCO)/CeO2/YSZ triple buffer;Thin Solid Films;2001-03
5. Ferroelectric properties of epitaxial barium titanate thin film capacitors on silicon substrate;Integrated Ferroelectrics;2001-01
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