Influence of Native Oxides on the Reliability of Ultrathin Gate Oxide-Reference-Cited by-同舟云学术

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Influence of Native Oxides on the Reliability of Ultrathin Gate Oxide

Published:1998-02-15 Issue:Part 1, No. 2 Volume:37 Page:397-401
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takeda Mikako,Ohwaki Takeshi,Fujii Hideo,Kusumoto Eisuke,Kaihara Yoshiyuki,Takai Yoshizo,Shimizu Ryuichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Removal of Si(1 1 1) wafer surface etch pits generated in ammonia-peroxide clean step;Applied Surface Science;2004-01

2. Physical and electrical properties of thin dielectrics prepared by photoassisted growth in an NO environment;Device and Process Technologies for MEMS and Microelectronics;1999-10-01

3. Characterization of silicon surface preparation processes for advanced gate dielectrics;IBM Journal of Research and Development;1999-05

4. Combined Thermal and UV Growth of Thin Dielectrics on Silicon in an NO Environment;MRS Proceedings;1999

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