Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy

Published:1998-06-15 Issue:Part 2, No. 6B Volume:37 Page:L697-L699
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kariya Michihiko,Nitta Shugo,Yamaguchi Shigeo,Kato Hisaki,Takeuchi Tetsuya,Wetzel Christian,Amano Hiroshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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1. Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire;Materials Science in Semiconductor Processing;2023-03

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3. DEPOSITION AND CHARACTERIZATION OF MAGNETRON CO-SPUTTERED InAlN FILM AT DIFFERENT Ar:N2 GAS FLOW RATIOS;Surface Review and Letters;2017-03-30

4. Growth of AlInN film on GaAs substrate and its application to MSM UV photodetector;Materials Research Express;2016-08-19

5. A comparative study on the growth of InAlN films on different substrates;Materials Science in Semiconductor Processing;2016-08

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