A comparative study on the growth of InAlN films on different substrates-Reference-Cited by-同舟云学术

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A comparative study on the growth of InAlN films on different substrates

Published:2016-08 Issue: Volume:51 Page:8-14
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Afzal Naveed,Devarajan Mutharasu,Ibrahim Kamarulazizi

Funder

The World Academy of Sciences

Universiti Sains Malaysia

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

2. Properties of Schottky barrier photodiodes based on InGaN/GaN MQW structures

3. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

4. Recent advances in InN-based solar cells: status and challenges in InGaN and InAlN solar cells

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1. Indium Aluminum Nitride: A Review on Growth, Properties, and Applications in Photovoltaic Solar Cells;2024

2. Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering;Materials;2022-10-21

3. Optical and electrical properties of Al1-xInxN films with a wide middle-composition range by RF sputtering;Applied Physics A;2022-01-22

4. Bandgap tunable Al1-In N films for ultraviolet–visible photodetectors with wide spectral response;Ceramics International;2022-01

5. Study of InAlN thin films deposited on silicon, ITO/PET, and ITO/GLASS substrates at room temperature for its possible use in solar cells;Journal of Materials Science: Materials in Electronics;2021-11-25

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