AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Published:2012-01-30 Issue:2 Volume:5 Page:022104
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Skierbiszewski Czesław,Siekacz Marcin,Turski Henryk,Muzioł Grzegorz,Sawicka Marta,Feduniewicz-Żmuda Anna,Cywiński Grzegorz,Cheze Caroline,Grzanka Szymon,Perlin Piotr,Wiśniewski Przemysław,Wasilewski Zbigniew R.,Porowski Sylwester

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=2/a=022104/pdf

Reference15 articles.

1. AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes

2. AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

3. AlGaN-Free Blue III–Nitride Laser Diodes Grown onc-Plane GaN Substrates

4. Pros and cons of green InGaN laser on c-plane GaN

5. High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy

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