High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy

Published:2008 Issue:5 Volume:44 Page:351
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Tan W.S.,Kauer M.,Hooper S.E.,Barnes J.M.,Rossetti M.,Smeeton T.M.,Bousquet V.,Heffernan J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20083456?crawler=true&mimetype=application/pdf

Reference11 articles.

1. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

2. Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE

3. InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

4. Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular beam epitaxy (MBE) growth of nitride semiconductors;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018

2. Molecular Beam Epitaxy of Nitrides for Advanced Electronic Materials;Handbook of Crystal Growth;2015

3. Molecular beam epitaxy (MBE) growth of nitride semiconductors;Nitride Semiconductor Light-Emitting Diodes (LEDs);2014

4. AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy;Applied Physics Express;2012-01-30

5. 8.2 Epitaxy;Laser Systems;2011

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