Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells-Reference-Cited by-同舟云学术

Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

Published:2011-12-16 Issue:1 Volume:5 Page:014101
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Jacopin Gwénolé,De Luna Bugallo Andrés,Lavenus Pierre,Rigutti Lorenzo,Julien François H.,Zagonel Luiz F.,Kociak Mathieu,Durand Christophe,Salomon Damien,Chen Xiao Jun,Eymery Joël,Tchernycheva Maria

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=1/a=014101/pdf

Reference13 articles.

1. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

2. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

3. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes

4. Visible-Color-Tunable Light-Emitting Diodes

5. Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

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