Decomposition Analysis of Chemically Amplified Resists for Improving Critical Dimension Control-Reference-Cited by-同舟云学术

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Decomposition Analysis of Chemically Amplified Resists for Improving Critical Dimension Control

Published:2009-06-22 Issue:6 Volume:48 Page:06FC08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shiono Daiju,Hada Hideo,Hirayama Taku,Onodera Junichi,Watanabe Takeo,Kinoshita Hiroo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Analysis of Line Edge Roughness Using Probability Process Model for Chemically Amplified Resists

2. An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling

3. Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM

4. Gate line-edge roughness effects in 50-nm bulk MOSFET devices

5. Reaction mechanism of fluorinated chemically amplified resists

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positive molecular resists;Materials and Processes for Next Generation Lithography;2016

2. Overview of materials and processes for lithography;Materials and Processes for Next Generation Lithography;2016

3. Effect of Molecular Weight and Protection Ratio on Latent Image Fluctuation of Chemically Amplified Extreme Ultraviolet Resists;Japanese Journal of Applied Physics;2012-12-01

4. Effect of Molecular Weight and Protection Ratio on Latent Image Fluctuation of Chemically Amplified Extreme Ultraviolet Resists;Japanese Journal of Applied Physics;2012-11-21

5. Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation;Japanese Journal of Applied Physics;2012-08-01

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