Photoluminescence Characteristics of InAs Quantum Dots with GaInP Cover Layer Grown by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Photoluminescence Characteristics of InAs Quantum Dots with GaInP Cover Layer Grown by Metalorganic Chemical Vapor Deposition

Published:2009-07-06 Issue:7 Volume:48 Page:070203
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sengoku Tomoyuki,Suzuki Ryoichiro,Nemoto Kosuke,Tanabe Satoru,Koyama Fumio,Miyamoto Tomoyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs

2. 1.3 μm room-temperature GaAs-based quantum-dot laser

3. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

4. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

5. Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction;Journal of Applied Physics;2015-11-14

2. InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2012-08-01

3. InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2012-07-10

4. Multilayer InAs Quantum Dot with GaNAs Strain Compensation Layers Partly Inserted in a Thin Spacer Layer;Japanese Journal of Applied Physics;2011-03-07

5. Multilayer InAs Quantum Dot with GaNAs Strain Compensation Layers Partly Inserted in a Thin Spacer Layer;Japanese Journal of Applied Physics;2011-03-01

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