Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films-Reference-Cited by-同舟云学术

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Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films

Published:2009-12-21 Issue:12 Volume:48 Page:121201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sato Tadashi,Yamamoto Kenichi,Kambara Junji,Kitahara Kuninori,Hara Akito

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference11 articles.

1. Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C

2. Thin-film transistors on plastic and glass substrates using silicon deposited by microwave plasma ECR-CVD

3. High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition

4. Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

5. Stability of nc-Si:H TFTs With Silicon Nitride Gate Dielectric

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radio-Frequency Inductors on High-Resistivity Silicon Substrates with a Nanocrystalline Silicon Passivation Layer;Japanese Journal of Applied Physics;2013-04-01

2. Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers;Semiconductor-On-Insulator Materials for Nanoelectronics Applications;2011

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