Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots-Reference-Cited by-同舟云学术

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Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots

Published:2009-09-24 Issue:9 Volume:48 Page:091103
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ryu Sung-Pil,Cho Nam-Ki,Lim Ju-Young,Rim A-Ram,Choi Won-Jun,Song Jin-Dong,Lee Jung-Il,Lee Yong-Tak

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference24 articles.

1. self-assembled quantum dots grown by ALMBE and MBE

2. Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique

3. Quantum dot lasers: The birth and future trends

4. STM and RHEED study of quantum dots obtained by submonolayer epitaxial techniques

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence Characterization of Vertically Coupled Low Density InGaAs Quantum Dots for the application to Quantum Information Processing Devices;Applied Science and Convergence Technology;2015-11-30

2. Growth and spectral analysis of stacked quantum dots for broadband superluminescent diodes;Journal of the Korean Physical Society;2013-02

3. Growth and characterization of low density droplet GaAs quantum dots for single photon sources;Quantum Sensing and Nanophotonic Devices VIII;2011-01-22

4. Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate;physica status solidi (a);2009-11-18

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