STM and RHEED study of quantum dots obtained by submonolayer epitaxial techniques-Reference-Cited by-同舟云学术

STM and RHEED study of quantum dots obtained by submonolayer epitaxial techniques

Published:1996-05 Issue: Volume:352-354 Page:651-655
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Guryanov G.M.,Cirlin G.E.,Petrov V.N.,Polyakov N.K.,Golubok A.O.,Tipissev S.Ya.,Gubanov V.B.,Samsonenko Yu.B.,Ledentsov N.N.,Shchukin V.A.,Grundmann M.,Bimberg D.,Alferov Zh.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference12 articles.

1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

3. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs

4. InAs/GaAs quantum dots radiative recombination from zero-dimensional states

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer;Journal of Applied Physics;2013-05-07

2. Carrier dynamics in the wetting layer of InGaAs/GaAs quantum dots grown by using migration-enhanced epitaxy;Journal of the Korean Physical Society;2013-04

3. Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation;Applied Physics Letters;2009-10-19

4. Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots;Japanese Journal of Applied Physics;2009-09-24

5. Self-assembled InAs island formation on GaAs (110) by metalorganic vapor phase epitaxy;Applied Surface Science;2008-01