Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1633348
Reference19 articles.
1. Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs
2. Size control of self-assembled InP/GaInP quantum islands
3. Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy
4. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
5. Growth and optical evaluation of InGaAs/GaAs quantum dots self-formed during alternate supply of precursors
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4. Effect of thermal treatment on the optical and the structural properties of In0.5Ga0.5As quantum dots;Journal of the Korean Physical Society;2014-05
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