Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals-Reference-Cited by-同舟云学术

Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals

Published:2009-06-22 Issue:6 Volume:48 Page:065503
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohtani Noboru,Katsuno Masakazu,Fujimoto Tatsuo,Nakabayashi Masashi,Tsuge Hiroshi,Yashiro Hirokatsu,Aigo Takashi,Hirano Hosei,Hoshino Taizo,Ohashi Wataru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference12 articles.

1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

2. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

3. Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

4. Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals

5. Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditions

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