Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1484229
Reference20 articles.
1. Slip systems and plastic deformation of silicon carbide single crystals at high temperatures
2. Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopy
3. Dislocation glide motion in 6H SiC single crystals subjected to high-temperature deformation
4. Kinking and Cracking Caused by Slip in Single Crystals of Silicon Carbide
5. Creep of 6H alpha-Silicon Carbide Single Crystals
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4. Slip planes in monoclinic β-Ga2O3 revealed from its {010} face via synchrotron X-ray diffraction and X-ray topography;Japanese Journal of Applied Physics;2020-11-09
5. Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals;Journal of Electronic Materials;2020-01-21
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