GaN Sensors with Metal–Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration-Reference-Cited by-同舟云学术

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GaN Sensors with Metal–Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration

Published:2009-04-20 Issue:4 Volume:48 Page:041002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chiu Shao-Yen,Liang Kun-Chieh,Huang Tze-Hsuan,Liu Kang-Ping,Huang Hsuan-Wei,Tsai Jung-Hui,Lour Wen-Shiung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference20 articles.

1. On the Hydrogen Sensing Behaviors of an InAlAs-Based Schottky Diode with a Thin Pt Catalytic Metal

2. Thermodynamic and Kinetic Analysis of Hydrogen Sensing in Pt/AlGaN/GaN Schottky Diodes at High Temperatures

3. Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N2 atmospheres

4. A Study of Hydrogen Sensing Performance of Pt–GaN Schottky Diodes

5. Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pt/NiO ring gate based Schottky diode hydrogen sensors with enhanced sensitivity and thermal stability;Sensors and Actuators B: Chemical;2014-10

2. Enhanced Sensitivity of Pt/NiO Gate Based AlGaN/GaN C-HEMT Hydrogen Sensor;Key Engineering Materials;2014-04

3. A Current Transport Mechanism on the Surface of Pd-SiO2Mixture for Metal-Semiconductor-Metal GaAs Diodes;Advances in Materials Science and Engineering;2013

4. Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode;PLoS ONE;2012-11-30

5. Ammonia Sensing Properties of a Pt/AlGaN/GaN Schottky Diode;IEEE Transactions on Electron Devices;2011-05

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