Performance Enhancement ofa-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices-Reference-Cited by-同舟云学术

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Performance Enhancement ofa-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices

Published:2009-04-20 Issue:4 Volume:48 Page:04C136
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ling Shih-Chun,Wang Te-Chung,Chen Jun-Rong,Liu Po-Chun,Ko Tsung-Shine,Lu Tien-Chang,Kuo Hao-Chung,Wang Shing-Chung,Tsay Jenq-Dar

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference24 articles.

1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

2. Electric field dependence of optical absorption near the band gap of quantum-well structures

3. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

4. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

5. Structural and electrical characterization of a ‐plane GaN grown on a ‐plane SiC

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and Characterization of GaN/InGaN Multiple Quantum Wells on Nanoscale Epitaxial Lateral Overgrown Layers;Crystal Growth & Design;2011-05-04

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