Structural and electrical characterization of a ‐plane GaN grown on a ‐plane SiC-Reference-Cited by-同舟云学术

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Structural and electrical characterization of a ‐plane GaN grown on a ‐plane SiC

Published:2003-11-24 Issue:7 Volume: Page:2132-2135
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Craven M. D.¹²,Chakraborty A.³,Imer B.²,Wu F.¹,Keller S.³,Mishra U. K.¹³,Speck J. S.¹²,DenBaars S. P.¹²

Affiliation:

1. ERATO JST, University of California, Santa Barbara, CA 93106, USA

2. Materials Department, University of California, Santa Barbara, CA 93106, USA

3. Electrical & Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303449

Reference11 articles.

1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

2. Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy

3. Comparison of the physical properties of GaN thin films deposited on (0001) and (011̄2) sapphire substrates

4. X-ray diffraction study of gallium nitride grown by MOCVD

5. Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy

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1. V-shaped semipolar InGaN/GaN multi-quantum-well light-emitting diodes directly grown on c-plane patterned sapphire substrates;physica status solidi (a);2017-06-16

2. Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes;Opto-Electronics Review;2016-01-01

3. Homoepitaxial HVPE GaN growth on non- and semi-polar seeds;SPIE Proceedings;2015-03-13

4. Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds;Journal of Crystal Growth;2014-10

5. Green Nitride LEDs;Springer Series in Materials Science;2011-11-24

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