Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds-Reference-Cited by-同舟云学术

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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Published:2014-10 Issue: Volume:403 Page:48-54
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Amilusik M.,Sochacki T.,Lucznik B.,Fijalkowski M.,Smalc-Koziorowska J.,Weyher J.L.,Teisseyre H.,Sadovyi B.,Bockowski M.,Grzegory I.

Funder

European Union within European Regional Development Fund

Polish National Science Centre Grant POLARPOL

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Development of the Bulk GaN Substrate Market;Hanser,2010

2. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

3. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

5. Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition

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1. Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride;Materials Science in Semiconductor Processing;2024-03

2. Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE;Materials Science in Semiconductor Processing;2023-11

3. Investigation of beryllium diffusion in HVPE-GaN grown in [11–20] and [10-10] crystallographic directions;Materials Science in Semiconductor Processing;2022-03

4. Direct growth of GaN on sapphire substrate via polarity transition from N- to Ga-polar using only hydride vapor phase epitaxy;Japanese Journal of Applied Physics;2021-12-15

5. Ammonothermal and HVPE Bulk Growth of GaN;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

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