Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping-Reference-Cited by-同舟云学术

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Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping

Published:2011-03-22 Issue:4 Volume:4 Page:046501
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Hori Masahiro,Shinada Takahiro,Taira Keigo,Komatsubara Akira,Ono Yukinori,Tanii Takashi,Endoh Tetsuo,Ohdomari Iwao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=4/a=046501/pdf

Reference12 articles.

1. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

2. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

3. Performance enhancement of semiconductor devices by control of discrete dopant distribution

4. Development of single-ion implantation — controllability of implanted ion number

5. Key technologies of a focused ion beam system for single ion implantation

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3. Investigation of O3-Al2O3/H2O-Al2O3dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors;physica status solidi (a);2016-05-20

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5. Electrical activation and electron spin resonance measurements of arsenic implanted in silicon;Applied Physics Letters;2015-04-06

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