Single Ion Implantation of Bismuth-Reference-Cited by-同舟云学术

Single Ion Implantation of Bismuth

Published:2020-08-02 Issue:1 Volume:218 Page:2000237
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Cassidy Nathan¹,Blenkinsopp Paul²,Brown Ian²,Curry Richard J.³^ORCID,Murdin B. N.⁴,Webb Roger¹^ORCID,Cox David⁴

Affiliation:

1. Ion Beam Centre Advanced Technology Institute University of Surrey Guildford GU2 7XH UK

2. Ionoptika Ltd. B6 Millbrook Close Chandler's Ford Hampshire SO53 4BZ UK

3. The Photon Science Institute Department of Electrical and Electronic Engineering The University of Manchester Manchester M13 9PL UK

4. Advanced Technology Institute University of Surrey Guildford GU2 7XH UK

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000237

Reference51 articles.

1. A single-atom transistor

2. Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

3. Single dopants in semiconductors

4. A role for ion implantation in quantum computing

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