Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

Abstract

AbstractArtificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom‐engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulators and universal solid‐state quantum computers. This work reports precise and repeatable, substitutional incorporation of single arsenic atoms into a silicon lattice. A combination of scanning tunneling microscopy hydrogen resist lithography and a detailed statistical exploration of the chemistry of arsine on the hydrogen‐terminated silicon (001) surface are employed to show that single arsenic dopants can be deterministically placed within four silicon lattice sites and incorporated with 97 ± 2% yield. These findings bring closer to the ultimate frontier in semiconductor technology: the deterministic assembly of atomically precise dopant and qubit arrays at arbitrarily large scales.