Investigation of O3-Al2O3/H2O-Al2O3dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors-Reference-Cited by-同舟云学术

Investigation of O3-Al2O3/H2O-Al2O3dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors

Published:2016-05-20 Issue:10 Volume:213 Page:2693-2698
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Shen Zhen¹²,He Liang¹,Zhou Guilin¹,Yao Yao¹,Yang Fan¹,Ni Yiqiang¹,Zheng Yue¹,Zhou Deqiu¹,Ao Jinping³,Zhang Baijun¹⁴,Liu Yang¹²

Affiliation:

1. School of Microelectronics; Sun Yat-Sen University; Guangzhou 510275 P.R. China

2. Institute of Power Electronics and Control Technology; Sun Yat-Sen University; Guangzhou 510275 P.R. China

3. Institute of Technology and Science; The University of Tokushima; Tokushima 770-8506 Japan

4. State Key Laboratory of Optoelectronic Materials and Technologies; Sun Yat-Sen University; Guangzhou 510275 P.R. China

Funder

National Natural Science Foundation of China

International Sci. & Tech. Collaboration Program of China

International Sci. & Tech. Collaboration Program of Guangdong Province

National High-tech R&D Program of China

National Natural Science Foundation of Guangdong

Science & Technology Plan of Guangdong Province

Guangdong-Hong Kong Joint Innovation Project of Guangdong Province

Science & Technology Plan of Guangzhou

Opened Fund of The State Key Laboratory on Integrated Optoelectronics

Collaborative Innovation and Platform Environment Construction Project of Guangdong Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. Electrical properties of thermally oxidized p-GaN metal–oxide–semiconductor diodes

3. Effect of annealing on gan-insulator interfaces characterized by metal-insulator-semiconductor capacitors

4. Room temperature photo-CVD SiO2layers on AlGaN and AlGaN/GaN MOS-HFETs

5. Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes

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