Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=2/a=025502/pdf
Reference9 articles.
1. Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrate
2. Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy
3. Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy
4. Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates
5. Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures
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