Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2937445
Reference17 articles.
1. High‐quality AlN epitaxial films on (0001)‐faced sapphire and 6H‐SiC substrate
2. Two-step Process for the Metalorganic Chemical Vapor Deposition Growth of High Quality AlN Films on Sapphire
3. High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H-SiC(0001) Substrate
4. Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes
5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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