In situFormation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures-Reference-Cited by-同舟云学术

In situFormation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures

Published:2011-04-20 Issue:4 Volume:50 Page:04DA09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sano Takahiro,Ohmi Shun-ichiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference22 articles.

1. Beyond the conventional transistor

2. Proposal of a multi-layer channel MOSFET: the application of selective etching for Si/SiGe stacked layers

3. Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor

4. Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2

5. Application of HfSiON as a gate dielectric material

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4. Variability Improvement by Si Surface Flattening of Electrical Characteristics in MOSFETs With High-k HfON Gate Insulator;IEEE Transactions on Semiconductor Manufacturing;2015-08

5. In-situ formation of Hf-based MONOS structures for non-volatile memory applications;IEICE Electronics Express;2015